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AON6426L N-Channel Enhancement Mode Field Effect Transistor
General Description
The AON6426L combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is ideal for load switch and battery protection applications.
Features
VDS (V) = 30V ID = 24A RDS(ON) < 5.5m RDS(ON) < 7.5m (VGS = 10V) (VGS = 10V) (VGS = 4.5V)
- RoHS Compliant - Halogen Free
100% UIS Tested! 100% R g Tested!
Top View Fits SOIC8 footprint !
S S S G D D D D G
D
DFN5X6 Absolute Maximum Ratings TA=25 unless otherwise noted C Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current G Pulsed Drain Current C Continuous Drain Current Avalanche Current C Repetitive avalanche energy L=0.1mH C TC=25 Power Dissipation B Power Dissipation
A C
S
Maximum 30 20 24 19 130 14 11 42 88 42 17 2 1.2 -55 to 150
Units V V A
VGS TC=25 C TC=100 C TA=25 C TA=70 C ID IDM IDSM IAR EAR PD PDSM TJ, TSTG
A A mJ W W C
TC=100 C TA=25 C TA=70 C
Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case
Symbol t 10s Steady-State Steady-State RJA RJC
Typ 24 53 2.6
Max 30 64 3
Units C/W C/W C/W
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AON6426L
Electrical Characteristics (TJ=25 unless otherwise noted) C Symbol Parameter Conditions ID=250A, VGS=0V VDS=30V, VGS=0V TJ=55 C VDS=0V, VGS= 20V VDS=VGS ID=250A VGS=10V, VDS=5V VGS=10V, ID=20A RDS(ON) gFS VSD IS Static Drain-Source On-Resistance VGS=4.5V, ID=20A Forward Transconductance Diode Forward Voltage VDS=5V, ID=20A IS=1A,VGS=0V C TJ=125 1.3 130 4.5 6.8 6 53 0.7 1 40 1930 VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 0.7 290 230 1.4 37 VGS=10V, VDS=15V, ID=20A 18 4.8 11 8.1 VGS=10V, VDS=15V, RL=0.75, RGEN=3 IF=20A, dI/dt=500A/s 8.6 29 8 14 40 17 2.1 45 2300 5.5 8.2 7.5 1.8 Min 30 Typ 36.7 1 5 100 2.5 Max Units V A nA V A m m S V A pF pF pF nC nC nC nC ns ns ns ns ns nC
STATIC PARAMETERS Drain-Source Breakdown Voltage BVDSS IDSS IGSS VGS(th) ID(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance
SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Qgd tD(on) tr tD(off) tf trr Qrr Gate Source Charge Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/s
A: The value of RJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25 The C. Power dissipation PDSM is based on R JA and the maximum allowed junction temperature of 150 The value in any given application depends C. on the user's specific board design. C, B. The power dissipation PD is based on TJ(MAX)=150 using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150 Ratings are based on low frequency and duty cycles to keep initial C. C. TJ =25 D. The RJA is the sum of the thermal impedence from junction to case RJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300s pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming C. a maximum junction temperature of TJ(MAX)=150 The SOA curve provides a single pulse ratin g. G. The maximum current rating is limited by bond-wires. H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25 C. Rev 0 : Aug-08 COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AON6426L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
130 120 110 100 90 80 70 60 50 40 30 20 10 0 0 10V 4.5 5V 4V ID(A) 80 70 60 50 40 30 20 VGS=3.5V 10 0 1 2 3 4 5 0 1 2 3 4 5 VGS(Volts) Figure 2: Transfer Characteristics (Note E) 125 C 25 C VDS=5V
ID (A)
VDS (Volts) Fig 1: On-Region Characteristics (Note E) 8 7 RDS(ON) (m ) 6 5 4 3 2 0 15 20 25 30 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 5 10 VGS=10V VGS=4.5V Normalized On-Resistance 2 1.8 1.6 1.4 1.2 1 0.8 0
VGS=10V ID=20A
17 5 VGS=4.5V 2 ID=20A 10
25
50
75
100
125
150
175
200
0 Temperature ( C) Figure 4: On-Resistance vs. Junction Temperature 18 (Note E)
1.0E+02
16 14 12 RDS(ON) (m ) 10 8 6 4 25 C 2 0 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) 125 C IS (A) ID=20A
1.0E+01 1.0E+00 1.0E-01 1.0E-02 1.0E-03 1.0E-04 1.0E-05 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) 125 C 25 C
40
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AON6426L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10 VDS=15V ID=20A Capacitance (pF) 3000 2700 2400 2100 1800 1500 1200 900 600 300 0 0 5 20 25 30 35 Qg (nC) Figure 7: Gate-Charge Characteristics 10 15 40 0 0 Crss 15 20 25 VDS (Volts) Figure 8: Capacitance Characteristics 5 10 30 Coss Ciss
8
VGS (Volts)
6
4
2
1000.0 100.0 ID (Amps) 10.0 1.0 0.1 0.0 0.01 0.1 1 VDS (Volts) 10 100 10s
200 160 Power (W) 120 80 40 0 0.0001 0.001 0.01 0.1 1 Pulse Width (s) 18 Figure 10: Single Pulse Power Rating Junction-toCase (Note F)
10s 100s 1ms 10ms
RDS(ON) limited DC
TJ(Max)=150 C TC=25 C
TJ(Max)=150 C TC=25 C
17 5 2 10
0
10
Figure 9: Maximum Forward Biased Safe Operating Area (Note F)
10 Z JC Normalized Transient Thermal Resistance D=Ton/T TJ,PK=TC+PDM.ZJC.RJC RJC=3 C/W 1
In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
40
0.1
PD Ton Single Pulse
T
0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AON6426L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
120 IAR (A) Peak Avalanche Current 100 80 TA=100 C 60 40 20 0 0.000001 0.00001 0.0001 0.001 Time in avalanche, tA (s) Figure 12: Single Pulse Avalanche capability (Note C) TA=125 C TA=150 C TA=25 C Power Dissipation (W) 50
40
30
20
10
0 0 25 50 75 100 125 150 TCASE ( C) Figure 13: Power De-rating (Note F)
30 25 Current rating ID(A)
10000 TA=25 C 1000 Power (W)
20 15 10 5
100
10
17 5 2 10
1 0 0 25 50 75 100 125 150 TCASE ( C) Figure 14: Current De-rating (Note F) 1E05 1E- 0.001 0.01 04 0.1 1 10 100 1000
Pulse Width (s) Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H)
0 18
10 Z JA Normalized Transient Thermal Resistance D=Ton/T TJ,PK=TA+PDM.ZJA.RJA 1 RJA=64 C/W
In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
40
0.1
0.01
PD Single Pulse Ton T 100 1000
0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AON6426L
Gate Charge Test Circuit & Waveform
Vgs Qg
+
VDC
10V
VDC
DUT Vgs Ig
+ Vds -
Qgs
Qgd
Charge
Resistive Switching Test Circuit & Waveforms
RL Vds Vds
Vgs Rg
DUT
VDC
+ Vdd Vgs
t d(on) t on tr t d(off) t off tf
90%
10%
Vgs
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L Vds Id Vgs Rg DUT Vgs Vgs Vgs Vds EAR= 1/2 LIAR
2
BVDSS
VDC
+ Vdd Id
I AR
Diode Recovery Test Circuit & Waveforms
Vds + DUT Vgs
t rr
Q rr = - Idt
Vds Isd Vgs Ig
L
Isd
IF
dI/dt I RM Vdd
VDC
+ Vdd Vds
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com

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